Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
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چکیده
منابع مشابه
Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved....
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Department of Physics and Materials Scien Chee Avenue, Kowloon Tong, Kowloon, Hon Department of Biology and Chemistry, Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Centre for Functional Photonics (CFP), Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Shenzhen Research Institute, City Universit † Electronic supplementary informa 10.1039/c4ra06172a ‡ These authors contributed equally to th Cite this: ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2013
ISSN: 1556-276X
DOI: 10.1186/1556-276x-8-410